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4" Sapphire Based GaN Templates Semiconductor Substrate

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4" Sapphire Based GaN Templates Semiconductor Substrate

Name: 4quot Sapphire Based GaN Templates Semiconductor Substrate
Brand: ZMKJ
Price: 1 USD

China 4" Sapphire Based GaN Templates Semiconductor Substrate factory

Brand Name : ZMKJ

Model Number : 4inch GaN-sapphire

Place of Origin : China

MOQ : 5pcs

Price : by case

Payment Terms : T/T, Western Union, paypal

Supply Ability : 50pcs/month

Delivery Time : in 30days

Packaging Details : single wafer container in cleaning room

substrate : sapphire wafer

layer : GaN template

layer thickness : 1-5um

conductivity type : N/P

Orientation : 0001

application : high power/high frequency electronic devices

application 2 : 5G saw/BAW Devices

silicon thickness : 525um/625um/725um

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2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate

Properties of GaN

Chemical properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.
2)Dissolved in a hot alkaline solution at a very slow rate.
3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.
4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.
5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical properties of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

Application of GaN

Main usage of GaN:

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

Specification

4" Sapphire Based GaN Templates Semiconductor Substrate

aracteristic Specification

Other relaterd 4INCH GaN Template Specification

	GaN/ Al₂O₃ Substrates (4") 4inch
Item	Un-doped	N-type	High-doped N-type
Size (mm)	Φ100.0±0.5 (4")
Substrate Structure	GaN on Sapphire(0001)
SurfaceFinished	(Standard: SSP Option: DSP)
Thickness (μm)	4.5±0.5; 20±2;Customized
Conduction Type	Un-doped	N-type	High-doped N-type
Resistivity (Ω·cm)(300K)	≤0.5	≤0.05	≤0.01
GaN Thickness Uniformity	≤±10% (4")
Dislocation Density (cm-2)	≤5×108
Useable Surface Area	＞90%
Package	Packaged in a class 100 clean room environment.

4" Sapphire Based GaN Templates Semiconductor Substrate

Crystal structure	Wurtzite
Lattice constant (Å)	a=3.112, c=4.982
Conduction band type	Direct bandgap
Density (g/cm3)	3.23
Surface microhardness (Knoop test)	800
Melting point (℃)	2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)	320
Band gap energy (eV)	6.28
Electron mobility (V·s/cm2)	1100
Electric breakdown field (MV/cm)	11.7

4" Sapphire Based GaN Templates Semiconductor Substrate

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