Abstract
The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices.
Key features of the 4-H Semi-Insulating SiC substrate include highly uniform electrical properties, low impurity concentration, and outstanding thermal stability. These attributes make it suitable for the fabrication of high-frequency RF power devices, high-temperature electronic sensors, and microwave electronic equipment. Its high breakdown field strength and excellent thermal conductivity also position it as the preferred substrate for high-power devices.
Furthermore, the 4-H Semi-Insulating SiC substrate demonstrates excellent chemical stability, allowing it to operate in corrosive environments and expanding its range of applications. It plays a critical role in industries such as semiconductor manufacturing, telecommunications, defense, and high-energy physics experiments.
In summary, the 4-H Semi-Insulating SiC substrate, with its outstanding electrical and thermal properties, holds significant promise in the semiconductor field and provides a reliable foundation for the production of high-performance electronic devices.
Properties
High-Power Electronic Devices: Semi-Insulating SiC is ideal for high-power and high-frequency electronic devices due to its high breakdown voltage and high thermal conductivity. It is used in power MOSFETs, diodes, and IGBT
RF Devices: Due to its high thermal conductivity and low loss, Semi-Insulating SiC is employed in RF devices such as microwave power amplifiers and RF transistors.
Optoelectronic Devices: Semi-Insulating SiC also exhibits excellent optoelectronic properties, making it suitable for manufacturing LEDs, lasers, and photodetectors.
Electronic Devices in High-Temperature Environments: The material's high melting point and excellent chemical stability make Semi-Insulating SiC widely used in electronic devices that operate in high-temperature environments, such as in aerospace, automotive, and industrial process control.
Radiation-Hardened Devices: Semi-Insulating SiC is highly resistant to radiation, making it suitable for radiation-hardened electronic devices in nuclear reactors and space applications.
Sensors: The unique properties of Semi-Insulating SiC material make it suitable for manufacturing various types of sensors, such as temperature sensors, pressure sensors, and chemical sensors.
Features:
High Resistivity: Semi-Insulating SiC possesses very high resistivity, meaning it can effectively impede the flow of electric current, making it suitable for use as an insulating layer in high-power electronic devices
High Thermal Conductivity: SiC material has a very high thermal conductivity, which helps in quickly and efficiently dissipating heat from devices, thereby enhancing device performance and reliability.
High Breakdown Voltage: Semi-Insulating SiC has a very high breakdown voltage, meaning it can operate in high-voltage applications without experiencing electrical breakdown.
Excellent Chemical Stability: SiC remains chemically stable across a wide range of temperatures and is highly resistant to most acids and bases.
High Melting Point: SiC has an exceptionally high melting point, approximately 2,730°C (4,946°F), allowing it to maintain stability in extreme high-temperature environments.
Radiation Tolerance: Semi-Insulating SiC exhibits high tolerance to radiation, making it perform excellently in nuclear reactor and space applications.
Excellent Mechanical Properties: SiC is a very hard material, showcasing excellent wear resistance and high strength.
Wide Bandgap Semiconductor: SiC is a wide bandgap semiconductor, featuring high electron mobility and low leakage current, which results in outstanding performance in high-temperature and high-frequency electronic devices.
| Property | Description |
| High Resistivity | Possesses very high electrical resistivity, acting as an effective insulator in high-power electronic devices. |
| High Thermal Conductivity | Quickly and efficiently dissipates heat, enhancing device performance and reliability. |
| High Breakdown Voltage | Can operate under high-voltage conditions without undergoing electrical breakdown. |
| Excellent Chemical Stability | Remains stable across a wide range of temperatures and is highly resistant to most acids and bases. |
| High Melting Point | Maintains stability in extreme high-temperature environments with a melting point around 2,730掳C (4,946掳F). |
| Radiation Tolerance | Exhibits high resistance to radiation, suitable for use in nuclear reactors and space applications. |
| Excellent Mechanical Properties | Very hard material, providing outstanding wear resistance and high strength. |
| Wide Bandgap Semiconductor | Functions well in high-temperature and high-frequency applications due to high electron mobility and low leakage current. |
Packing and Shipping:
Packaging and Shipping Silicon Carbide Wafers
Silicon Carbide (SiC) Wafers are thin slices of semiconductor material primarily used for power electronics. To ensure the wafers are not damaged during shipping, it’s important to follow the proper packaging and shipping instructions.
Packaging
- Wafers must be shipped in an ESD safe package.
- Each wafer should be wrapped in ESD safe material such as an ESD foam or bubble wrap.
- The package should be sealed with ESD safe tape.
- The package should be labeled with the ESD safe symbol and "Fragile" sticker.
Product Tags:
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Light Color Crystal Structure 4H-SiC 6H-SiC Semi-Insulating SiC High Mechanical Hardness Images
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