Product Introduction
HPSI SiC powder (High Purity Semi-Insulating Silicon Carbide) is a high-performance material widely used in power electronics, optoelectronic devices, and high-temperature, high-frequency applications. Known for its exceptional purity, semi-insulating properties, and thermal stability, HPSI SiC powder is a critical material for next-generation semiconductor devices.
Working Principle
Crystal Growth Process in PVT Silicon Carbide (SiC) Single Crystal Furnace:
- Place high-purity silicon carbide (SiC) powder at the bottom of the graphite crucible inside the furnace, and bond a silicon carbide seed crystal to the inner surface of the crucible lid.
- Heat the crucible to temperatures exceeding 2000°C using electromagnetic induction heating or resistive heating. Establish an axial temperature gradient within the crucible, maintaining the temperature at the seed crystal slightly lower than that at the powder source.
- The SiC powder decomposes into gaseous components including silicon atoms, SiC₂ molecules, and Si₂C molecules. Driven by the temperature gradient, these vapor-phase substances transport from the high-temperature zone (powder) to the low-temperature zone (seed crystal). On the carbon face of the seed crystal, these components arrange in an ordered atomic structure following the crystal orientation of the seed crystal. Through this process, the crystal gradually thickens and ultimately grows into a silicon carbide ingot.
Specifications
| Parameter | Value Range |
| Purity | ≥ 99.9999% (6N) |
| Particle Size | 0.5 µm - 10 µm |
| Resistivity | 10⁵ - 10⁷ Ω·cm |
| Thermal Conductivity | ~490 W/m·K |
| Bandgap Width | ~3.26 eV |
| Mohs Hardness | 9.5 |
Applications
SiC Single Crystal Growth
- HPSI SiC powder is primarily used as the raw material for producing high-purity silicon carbide single crystals through Physical Vapor Transport (PVT) or sublimation methods.
Physical Structure
HPSI SiC powder features a highly crystalline structure, typically in the hexagonal (4H-SiC) or cubic (3C-SiC) polytypes, depending on the production method. Its high purity is achieved by minimizing metallic impurities and controlling the inclusion of dopants like aluminum or nitrogen, which influence its electrical and insulating characteristics. The fine particle size ensures uniformity and compatibility with various manufacturing processes.
Q&A
Q1:What is HPSI silicon carbide(SiC) powder used for?
SiC micron powder applications are such as sandblasting injectors, automotive water pump seals, bearings, pump components, and extrusion dies that use high hardness, abrasion resistance, and corrosion resistance of carbide of silicon.
Q2: What is HPSI Silicon Carbide (SiC) Powder?
HPSI (High Purity Sintered) Silicon Carbide powder is a high-purity, high-density SiC material manufactured through advanced sintering processes.
Q3: Can HPSI SiC powder be customized for specific applications?
Yes, HPSI SiC powder can be tailored in terms of particle size, purity level, and doping concentration to meet specific industrial or research needs.
Q4: How does HPSI SiC powder directly impact semiconductor wafer quality?
Its purity, particle size, and crystal phase directly determine.
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High Purity Semi-Insulating HPSI SiC Powder/99.9999% Purity Crystal Growth Images
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